ISI Paper

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Thin-layer oxide in the drift region of double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors

ISI Paper
M. Mehrad
Materials Science in Semiconductor Processing - , , - January, 2015 - .
Publication year: 2015

 Positive charges at buried oxide interface of RESURF: an analytical mosel for the breakdown voltage 

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Superlattices and Microstructures - , 72, 336-343 - January, 2014 - .
Publication year: 2014

Injected charges in partial SOI LDMOSs: a new technique for improving the breakdown voltage

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Superlattices and Microstructures - , 57, 77-84 - January, 2013 - .
Publication year: 2013

A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shape buried oxide feature

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Material Sci. in Semiconductor Processing - , 16, 1977-1981 - January, 2013 - .
Publication year: 2013

 Breakdown voltage improvement of LDMOSs by charge balancing: an inserted p-layer in trench oxide (IPT-LDMOS)

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Superlattices and Microstructures - , 51, 412-420 - January, 2012 - .
Publication year: 2012

 New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Current Applied Physics - , 12, 1340-1344 - January, 2012 - .
Publication year: 2012

A new nanoscale and high temperature field-effect transistor: bi level FinFET

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Physica E: Low-dimensional sys. and Nanostructures - , 50, 124303-124308 - January, 2011 - .
Publication year: 2011

A new rounded edge fin field-effect transistor for improving self-heating effects 

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Japanese Journal of Applied Physics - , 50, 124303-124306 - January, 2011 - .
Publication year: 2011

The best control of parasitic BJT effect in SOI-LDMOS with SiGe window under channel

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
IEEE Trans. Electron Devices - , 59, 419-425 - January, 2011 - .
Publication year: 2011

Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications 

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
IEEE Trans. Device and Materials Reliability - , 10, 271- 275 - January, 2010 - .
Publication year: 2010

A new technique in LDMOS transistors to improve the breakdown voltage and the lattice temperature

ISI Paper
M. Mehrad, A.A. Orouji and M. Taheri
Materials Science in Semiconductor Processing, 34, 276-280, 2015
Publication year: 2015

Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET

ISI Paper
M. Mehrad
Superlattices and Microstructures 85, 573-580, 2015
Publication year: 2015

Omega shape channel LDMOS: a novel structure for high voltage applications

ISI Paper
M. Mehrad
Physica E: Low-dimensional Systems and Nanostructures 75, 196-201, 2016
Publication year: 2016

A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region

ISI Paper
M. Zareiee, A.A. Orouji and M. Mehrad
Journal of Computational Electronics 15 (2), 611-618, 2016
Publication year: 2016

Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage

ISI Paper
M. Mehrad
Superlattices and Microstructures 91, 193-200, 2016
Publication year: 2016

Improved Device Performance in Nano Scale Transistor: An Extended Drain SOI MOSFET

ISI Paper
M. Mehrad, M. Zareiee
ECS Journal of Solid State Science and Technology 5 (7), M74-M77, 2016
Publication year: 2016

Reducing Floating Body and Short Channel Effects in Nano Scale Transistor: Inserted P+ Region SOI-MOSFET

ISI Paper
Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2016
Publication year: 2016

Application of N+ Buried Layer in Reducing Lattice Temperature of Nano-Scale MOSFET

ISI Paper
Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2016
Publication year: 2016

Controlled kink effect in a novel high-voltage LDMOS transistor by creating local minimum in energy band diagram

ISI Paper
Mahsa Mehrad, Meysam Zareiee, Ali Asghar Orouji
IEEE Transactions on electron devices 64 (10), 4213-4218
Publication year: 2017

A reliable nano device with appropriate performance in high temperatures

ISI Paper
Meysam Zareiee, Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2017.
Publication year: 2017