Abstract

A new analytical model of reduced surface field (RESURF) transistor on silicon-on-insulator (SOI) technology with positive charges at the buried oxide interface is proposed. Interface charges at the interface of the buried oxide (BOX) and drift region increase the electric field in the BOX and decrease the surface electric field in the silicon region. So, this approach is suitable to enhance the breakdown voltage with increasing the electric field at the BOX. Two-dimensional Poisson equation is solved for the new structure and surface potential, surface electric field and breakdown voltage are derived. Moreover, the validity of this novel model is demonstrated by comparing with numerical simulation of ATLAS simulator. The influence of drift region doping, density of positive charges at the buried oxide interface and also the thicknesses of field oxide and BOX are discussed in this paper. Furthermore, the analytical results have the best agreement with numerical simulation.