Abstract

A new device structure for high breakdown voltage and low maximum lattice temperature of the LDMOS device is proposed in this paper. The main idea in the proposed structure is using a Si₃N₄ trench region with open windows made by silicon in it. In the conventional structure, a trench oxide was used to have high breakdown voltage that causes high lattice temperature. So, replacing Si₃N₄ material is suitable way to have a more reliable device. The proposed periodic trench region in LDMOS transistor (PTR-LDMOS) has periodic open windows to increase the additional peaks in the electric field profile and increase the breakdown voltage. Also, the simulation with two-dimensional ATLAS simulator shows that reduced main electric field peaks cause low electron temperature that enhances the reliability of the proposed structure.