Abstract

High breakdown voltage and reduced on-resistance are desired characteristics in power MOSFETs. In order to obtain an excellent performance of Trench Gate Power MOSFET, we have proposed a new structure in which a SiGe zone is incorporated in the drift region to reduce on-resistance. Also, the buried oxide is considered in the drift region that surrounds the SiGe zone to increase breakdown voltage. The proposed structure is called a SiGe Zone Trench Gate MOSFET (SZ-TG). Our simulation with two dimensional simulator shows that by reducing an electric field and controlling the effects of parasitic BJT transistor in the SZ-TG structure, we can expand power applications of trench gate power structures.