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A new technique in LDMOS transistors to improve the breakdown voltage and the lattice temperature

ISI Paper
M. Mehrad, A.A. Orouji and M. Taheri
Materials Science in Semiconductor Processing, 34, 276-280, 2015
Publication year: 2015

Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET

ISI Paper
M. Mehrad
Superlattices and Microstructures 85, 573-580, 2015
Publication year: 2015

Omega shape channel LDMOS: a novel structure for high voltage applications

ISI Paper
M. Mehrad
Physica E: Low-dimensional Systems and Nanostructures 75, 196-201, 2016
Publication year: 2016

A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region

ISI Paper
M. Zareiee, A.A. Orouji and M. Mehrad
Journal of Computational Electronics 15 (2), 611-618, 2016
Publication year: 2016

Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage

ISI Paper
M. Mehrad
Superlattices and Microstructures 91, 193-200, 2016
Publication year: 2016

Improved Device Performance in Nano Scale Transistor: An Extended Drain SOI MOSFET

ISI Paper
M. Mehrad, M. Zareiee
ECS Journal of Solid State Science and Technology 5 (7), M74-M77, 2016
Publication year: 2016

Reducing Floating Body and Short Channel Effects in Nano Scale Transistor: Inserted P+ Region SOI-MOSFET

ISI Paper
Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2016
Publication year: 2016

Application of N+ Buried Layer in Reducing Lattice Temperature of Nano-Scale MOSFET

ISI Paper
Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2016
Publication year: 2016

Controlled kink effect in a novel high-voltage LDMOS transistor by creating local minimum in energy band diagram

ISI Paper
Mahsa Mehrad, Meysam Zareiee, Ali Asghar Orouji
IEEE Transactions on electron devices 64 (10), 4213-4218
Publication year: 2017

A reliable nano device with appropriate performance in high temperatures

ISI Paper
Meysam Zareiee, Mahsa Mehrad
ECS Journal of Solid State Science and Technology, 2017.
Publication year: 2017

A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology M Mehrad, M Zareiee

Journal Paper
Mahsa Mehrad, Meysam Zareiee
TABRIZ JOURNAL OF ELECTRICAL ENGINEERING 47 (2), 727-733
Publication year: 2017

A Novel Nano MOSFET for Increasing the Device Reliability

Journal Paper
Mahsa Mehrad, Meysam Zareiee
TABRIZ JOURNAL OF ELECTRICAL ENGINEERING 48 (3), 1399-1404, 2018.
Publication year: 2018

C-shape silicon window nano MOSFET for reducing the short channel effects

Conference Paper
Mahsa Mehrad, Elmira Safarpour Ghadi
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece.
Publication year: 2017

Three p-silicon layers in reliable lateral double diffused metal oxide semiconductor transistor

Conference Paper
Mahsa Mehrad
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain.
Publication year: 2018

 Positive charges at buried oxide interface of RESURF: an analytical mosel for the breakdown voltage 

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Superlattices and Microstructures - , 72, 336-343 - January, 2014 - .
Publication year: 2014

Injected charges in partial SOI LDMOSs: a new technique for improving the breakdown voltage

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Superlattices and Microstructures - , 57, 77-84 - January, 2013 - .
Publication year: 2013

A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shape buried oxide feature

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Material Sci. in Semiconductor Processing - , 16, 1977-1981 - January, 2013 - .
Publication year: 2013

 Breakdown voltage improvement of LDMOSs by charge balancing: an inserted p-layer in trench oxide (IPT-LDMOS)

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Superlattices and Microstructures - , 51, 412-420 - January, 2012 - .
Publication year: 2012

 New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Current Applied Physics - , 12, 1340-1344 - January, 2012 - .
Publication year: 2012

A new nanoscale and high temperature field-effect transistor: bi level FinFET

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
Physica E: Low-dimensional sys. and Nanostructures - , 50, 124303-124308 - January, 2011 - .
Publication year: 2011

A new rounded edge fin field-effect transistor for improving self-heating effects 

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
Japanese Journal of Applied Physics - , 50, 124303-124306 - January, 2011 - .
Publication year: 2011

The best control of parasitic BJT effect in SOI-LDMOS with SiGe window under channel

ISI Paper
Ali. A. Orouji , Mahsa. Mehrad
IEEE Trans. Electron Devices - , 59, 419-425 - January, 2011 - .
Publication year: 2011

Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications 

ISI Paper
Mahsa. Mehrad , Ali. A. Orouji
IEEE Trans. Device and Materials Reliability - , 10, 271- 275 - January, 2010 - .
Publication year: 2010

ایجاد پنجره های سیلیسیمی در لایه ی اکسید مدفون ترانزیستور اثرمیدان نفوذی افقی: ارائه ی ساختار نوین برای بهبود ولتاژ شکست 

Conference Paper
مهسا مهراد , نیلوفر محمدی نیا
اولین کنفرانس سراسری توسعه محوری مهندسی عمران ، معماری، برق و مکانیک ایران - , , - December, 2014 - .
Publication year: 2014

Multi P-Regions in Trench Oxide LDMOS Transistor: A New Structure for Improving Breakdown Voltage

Conference Paper
Mahsa Mehrad
First National Conference on Development of Civil Engineering, Architecture, Electricity and Mechanical in Iran - , , - December, 2014 - .
Publication year: 2014

Three independent gates fin field effect transistor

Conference Paper
Ali. A. Orouji , Mahsa. Mehrad
International Conf. on Nano Sci. Tech. (ICONSAT) - , , -January, 2010 - .
Publication year: 2010

novel SOI-MOSFET with buried alumina gate oxide

Conference Paper
Mahsa. Mehrad , Ali. A. Orouji
IEEE-RSM Pro., Kota Bahru, Malaysia - , , 109-112 -January, 2009 - .
Publication year: 2009

 A novel triple graded channel surrounding gate transistor 

Conference Paper
Mahsa. Mehrad , Ali. A. Orouji
International Workshop on the Physics of Semiconductor Devices - , , 763-765 - January, 2009 - .
Publication year: 2009