In this paper, a new rounded edge fin field-effect transistor
(RE-FinFET) is proposed, where the edges of fins near source and drain
regions are rounded in order to reduce self-heating effects. The key
idea in this work is to control self-heating by reducing the thermal
resistance. Moreover, our simulation results demonstrate that current of
the device increases. Also, the series resistance reduces due to the
rounded edges of fins near source and drain. Furthermore, using
three-dimensional (3D) and two-carrier device simulator, we have
examined various design issues of the RE-FinFET and provided the reasons
for the improved performance in terms of self-heating and short channel
effects. Our results suggest that RE-FinFET is an alternate structure
for FinFETs, and expands the application of FinFETs to high temperature.