Abstract

In this paper a new technique for controlling floating body effect and self-heating effects is proposed. The main idea in the proposed structure is using a L-shape SiGe region in the nano-scale SOI-MOSFET (LS-SOI). The L-shape SiGe region is located in the source region and is extended under channel. The difference band gap between silicon and silicon–germanium cause discontinuity in band diagram which helps to collect channel holes. Reducing the hole density in channel of the proposed LS-SOI in comparison to conventional SOI-MOSFET (C-SOI) results in suppressed floating body effect. Also, the SiGe region under the channel decreases the lattice temperature in the LS-SOI. Replacing the SiGe with higher thermal capability than buried oxide is useful to have a reliable structure. Moreover, effective mobility, off current and sub-threshold swing improves in the proposed structure.