Abstract

In this paper, we propose a new Bi Level Fin Field Effect Transistor (BL-FinFET) where the fin regions consist of Bi level. The novel features of the BL-FinFET are simulated and compared with a Conventional FinFET (C-FinFET). The three-dimensional and two-carrier device simulation demonstrate that the application of Bi level to the FinFET structure results in an ideal threshold voltage roll-off, reduced DIBL, excellent behavior in voltage gain at high temperatures and the gate capacitance improvement when compared with the C-FinFET. Also, this paper illustrates the benefits of the high performance BL-FinFET device over the conventional one and expands the application of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs) to high temperature.