Abstract

Cu-doped tin-sulfide thin films were deposited
onto glass substrates at T = 400 C through spray pyrolysis.
The effects of Cu doping on the structural, optical,
and electrical properties of the thin films were investigated.
The precursor solution was prepared by dissolving tin
chloride (SnCl45H2O) and thiourea (CS(NH3)2) in deionized
water and then adding copper chloride (Cl2Cu2H2O).
SnS2:Cu thin films were prepared with ½Cu
½Sn % ¼ 0; 1; 2; 3;
4 at:%. X-ray diffraction analysis showed that the thin films
had a preferred (001) orientation of the SnS2 phase and that
the intensity of the (001) peak decreased with increased
doping concentration from 1–4 at.%. Scanning electron
microscopy studies indicated that the thin films had
spherical grains. Characterization results of thin films
showed that single-crystal grains, average grain size,
optical band gap, carrier concentration, Hall mobility, and
electrical resistance varied within 5–14 nm, 46–104 nm,
2.81–2.99 eV, 2.42 9 1016–26.73 9 1016 cm-3, 2.41 9
10-3–20.04 9 10-3 cm2/v.s, and 9.05–12.89 X cm,
respectively. Hall effect studies further revealed that the
films exhibited n-type conductivity.