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A novel high performance nano-scale MOSFET by inserting Si3N4 layer in the channel

ISI Paper
Meysam Zareiee
Superlattices and Microstructures, Volume 88, Pages 254–261, 2015
Publication year: 2015

Solving the problem of forbidden states in Discrete Event Systems: A novel systematic method for reducing the number of control places

ISI Paper
Meysam Zareiee, Abbas Dideban, Ali A. Orouji and Hadi Soltanizadeh
Asian Journal of Control, Vol. 17, pp. 1006-1015, 2014
Publication year: 2014

A Simple Petri Net Controller by Solving Some Integer Linear Programming Problems

ISI Paper
Abbas, Dideban., Meysam, Zareiee., and Ali. A. Orouji
Journal of control engineering and applied informatics, 16(4), pp. 3-11, (2014)
Publication year: 2014

Safety analysis of discrete event systems using a simplified Petri net controller

ISI Paper
Meysam, Zareiee., Abbas, Dideban., and Ali. A, Orouji
ISA Transactions, 53(1), pp. 44-49, 2014
Publication year: 2014

Controller synthesis with highly simplified linear constraints in PN model

ISI Paper
Abbas, Dideban., Meysam, Zareiee., and Hassane, Alla
Asian Journal of control, 15(1), pp. 80-94, 2013
Publication year: 2013

Fault modeling in discrete event systems using Petri Nets

ISI Paper
Payam, Nazemzadeh., Abbas, Dideban., and Meysam, Zareiee
ACM Transactions on Embedded Computing Systems, 12(1), 2013
Publication year: 2013

A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region

ISI Paper
Meysam Zareiee, Ali Asghar Orouji, Mahsa Mehrad
Journal of Computational Electronics, Volume 15, Issue 2, Pages 611-618, 2016
Publication year: 2016

Improved Device Performance in Nano Scale Transistor: An Extended Drain SOI MOSFET

ISI Paper
M. Mehrad, M. Zareiee
ECS Journal of Solid State Science and Technology 5 (7), M74-M77, 2016
Publication year: 2016

Modifying buried layers in nano-MOSFET for achieving reliable electrical characteristics

ISI Paper
Meysam Zareiee
ECS Journal of Solid State Science and Technology 5 (10), M113-M117
Publication year: 2016

High performance nano device with reduced short channel effects in high temperature applications

ISI Paper
Meysam Zareiee
ECS Journal of Solid State Science and Technology 6 (7).
Publication year: 2017

Superior electrical characteristics of novel nanoscale MOSFET with embedded tunnel diode

ISI Paper
Meysam Zareiee, Ali Asghar Orouji
Superlattices and Microstructures 101, 57-67
Publication year: 2017

A new architecture of the dual gate transistor for the analog and digital applications

ISI Paper
Meysam Zareiee
AEU-International Journal of Electronics and Communications 100, 114-118
Publication year: 2019

Controlled kink effect in a novel high-voltage LDMOS transistor by creating local minimum in energy band diagram

ISI Paper
Mahsa Mehrad, Meysam Zareiee, Ali Asghar Orouji
IEEE Transactions on electron devices 64 (10), 4213-4218
Publication year: 2017

A reliable nano device with appropriate performance in high temperatures

ISI Paper
Meysam Zareiee, Mahsa Mehrad
ECS Journal of Solid State Science and Technology 6 (4), M50-M54
Publication year: 2017

A novel dual trench gate power device by effective drift region structure

ISI Paper
Meysam Zareiee
Superlattices and Microstructures 125, 8-15
Publication year: 2019