In this study, the influence of increasing the Al concentration on the electrical, optical and structural properties of spray-pyrolysis-deposited SnO₂ films has been investigated. The SnO₂ : Al films were deposited at a substrate temperature of 480°C using a hydro-alcoholic solution consisting of tin and aluminium chlorides with various Al-doping levels from 0 to 30 wt% in solution. The [Al]/[Sn] atomic ratios were from 0 to 12.1 in films. The results of x-ray diffraction have shown that the deposited films are polycrystalline without any second phases with preferential orientations along the (110), (211) and (301) planes and an average grain size of 28.7 nm. Also, the Hall effect and resistivity measurements of the films show that for a specific acceptor dopant (Al) concentration (8.0 at% in film), majority carriers convert from electrons to holes and p-conductivity dominates. The optical absorption edge for undoped SnO₂ films lies at 4.105 eV, whereas for high acceptor-doped films it shifts towards lower energies (longer wavelengths) in the range of 4.105–3.604 eV.