Thin films of tin selenide (Sn_xSe_y) with an atomic ratio of , 1 and 1.5 were prepared on a glass substrate at T = 470°C using a spray pyrolysis technique. The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride (SnCl₄ 5H₂O) and selenide acide (H₂SeO₃). The prepared thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy, scanning tunneling microscopy, scanning helium ion microscopy, and UV-vis spectroscopy. The photoconductivity and thermoelectric effects of the Sn_xSe_y thin films were then studied. The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth. The increasing atomic ratio of r in the films, the optical gap, photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV, 0.01 to 0.31 and −26.2 to −42.7 mV/K (at T = 350 K), respectively. In addition, the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe₂ phases.