Abstract

Zn doped SnS₂ thin films have been deposited by spray pyrolysis technique. For doping level ranging from 0 to 10 at%. X-ray diffraction patterns of films with different Zn content show that all samples have nearly single crystalline structure with dominant berndtite phase andpreferred orientation of (001) plane. Optical transparency of films in visible region decreases from 60 to 10 %, when doping level is increased. Optical band gap of the films, lies in region of 2.3–2.7 eV for different dopant concentration. Refractive Index for pure SnS₂ samples is about 1.6 and it increases to 2.05 after addition of Zn. Extinction coefficient (k) is about 0.2 for pure SnS₂, that for the doping samples it increases up 0.6. Photoconductivity of Zn doped SnS₂ thin films have been measured under visible light.