Abstract

A novel structure of LDMOS transistor is proposed in this paper. In Multi P-regions Trench Oxide LDMOS (MPT-LDMOS), a trench oxide is considered in the drift region in which three p-regions areincorporating under the trench oxide. The balanced charges between P-regions and N-drift P-regonshelps the depletion regions extend that causes uniform electric field. So, the breakdown voltage increases in this new structure in comparison to the conventional LDMOS structure (C-LDMOS). Also, the simulation with ATLAS simulator shows that by optimum values of p-region length and doping density, causes the specific on-resistence decrease. Therefore, high performance of the MPTLDMOS extends LDMOS application between other power devices.