Abstract

ITO thin films and ITO/Ag/ITO multilayered films were prepared on glass substrate by reactive thermal evaporation technique without intentionally heating the substrate. After deposition the films were annealed in air at three different temperatures (300°C, 420°C and 540°C). The thickness of each layer in the ITO/Ag/ITO films was kept constant at 50 nm/10 nm/40 nm. The opto-electrical and structural properties of ITO/Ag/ITO multilayered films were compared with conventional ITO single-layer films. Although both films had identical thickness, 100 nm, the ITO/Ag/ITO films showed a lower resistivity. XRD spectra showed that Ag intermediate layer had a small effect on crystalline properties of ITO/Ag/ITO films.