M. R. Fadavieslam , M. M. Bagheri-Mohagheghi
Journal of Semiconductors - 8, 34, 082001-7 - August, 2013 - .
Publication year: 2013

Abstract:

Thin films of tin selenide (SnxSey/ with an atomic ratio of r=[x/y]= 0.5, 1, and 1.5 were prepared on a
glass substrate at T D 470 C using a spray pyrolysis technique. The initial materials for the preparation of the thin
films were an alcoholic solution consisting of tin chloride (SnCl4 5H2O) and selenide acide (H2SeO3/. The prepared
thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy, scanning tunneling
microscopy, scanning helium ion microscopy, and UV-vis spectroscopy. The photoconductivity and thermoelectric
effects of the SnxSeythin films were then studied. The SnxSey thin films had a polycrystalline structure with an
almost uniform surface and cluster type growth. The increasing atomic ratio of r in the films, the optical gap, photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV , 0.01 to 0.31 and -26:2 to -42:7 mV/K
(at T D 350 K), respectively. In addition, the XRD patterns indicated intensity peaks in r D 1 that corresponded
to the increase in the SnSe and SnSe2 phases.