Abstract
In this research, antimony-doped tin dioxide (ATO) films were deposited on glass substrates at T=550 (_^o)C through spray pyrolysis. The effects of antimony doping on the structural, optical, and electrical properties of the thin films were investigated. Tin chloride (SnCl4•5H2O) and antimony chloride (SbCl3) were used as a host and a dopant precursor, respectively. X-ray diffraction (XRD) analysis indicated that the undoped SnO2 thin film exhibited a preferred (211) orientation. As the Sb doping concentration increased, a different preferred (200) orientation was observed. Field emission scanning electron microscopy analysis revealed polyhedron-like grains of the thin films. Atomic force microscopy analysis demonstrated that the minimum and maximum amounts of roughness were within the [Sb]/[Sn] % molar ratio of 10 at.% and 7.5 at.% concentrations, respectively. As the doping concentration increased, the average grain size initially increased and then decreased; electrical resistance initially decreased and subsequently increased; the carrier concentration and Hall mobility initially increased and then decreased; and Seebeck coefficient decreased. The optical band gap of the thin films ranged from 3.16 eV to 3.8 eV. Hall effect and thermoelectric studies revealed that the films exhibited an n-type conductivity.